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APTM50DHM38
Asymmetrical - bridge MOSFET Power Module
VDSS = 500V RDSon = 38mW max @ Tj = 25C ID = 90A @ Tc = 25C
Application * * * Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
* * * Benefits
S4 G4 OUT2
OUT1 G1 S1 VBUS 0/VBUS
* * * *
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 500 90 67 360 30 38 694 46 50 2500 Unit V A V mW W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM50DHM38 - Rev 2
April, 2004
Tc = 25C
APTM50DHM38
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 375A
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Min 500 Tj = 25C
Tj = 125C
Typ
Max 150 750 38 5 150
Unit V A mW V nA
VGS = 10V, ID = 45A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 90A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 90A RG = 2W Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 90A, RG = 2 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 90A, RG = 2 Min Typ 11.2 2.4 0.18 246 66 130 18 35 87 77 1510 1452 2482 1692 J J ns Max Unit nF
nC
Diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt = 200A/s IF = 100A VR = 400V di/dt = 200A/s Min Tc = 80C Typ 100 1.6 1.9 1.4 180 220 390 1450 Max 1.8 V Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
April, 2004 2-6 APTM50DHM38 - Rev 2
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1.
APT website - http://www.advancedpower.com
APTM50DHM38
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.18 0.6 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Package outline
APT website - http://www.advancedpower.com
3-6
APTM50DHM38 - Rev 2
April, 2004
APTM50DHM38
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.2 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.9 0.7 0.5 0.3
0.1 0.02 0.05 0 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
Low Voltage Output Characteristics 350 ID, Drain Current (A) VGS=10&15V ID, Drain Current (A) 300 250 200 150 100 50 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 45A
Transfert Characteristics 250
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
8V 7.5V 7V 6.5V 6V 5.5V
200 150 100 50
TJ=25C TJ=125C TJ=-55C 8
0 25 0
1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0
VGS=10V
DC Drain Current vs Case Temperature 100 80 60 40 20 0
VGS=20V
50
100
150
200
25
ID, Drain Current (A)
50 75 100 125 TC, Case Temperature (C)
150
April, 2004
APT website - http://www.advancedpower.com
4-6
APTM50DHM38 - Rev 2
APTM50DHM38
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss 1000 Crss 100 VGS, Gate to Source Voltage (V) 1000
limited by RDSon
2.5 2.0 1.5 1.0 0.5 0.0
ON resistance vs Temperature
VGS=10V ID=45A
-50 -25
0
25
50
75 100 125 150
TJ, Junction Temperature (C) Maximum Safe Operating Area
100
limited by RDSon
100s
10 Single pulse TJ=150C 1 1
1ms 10ms 100ms
10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 VCE=100V ID=90A 12 T =25C J V =250V
CE
10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC)
April, 2004
VCE=400V
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
APT website - http://www.advancedpower.com
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APTM50DHM38 - Rev 2
APTM50DHM38
Delay Times vs Current 100 80 60 40 20 0 20 40 60 80 100 120 140 ID, Drain Current (A) Switching Energy vs Current 5 Switching Energy (mJ) 4 3 2 1 0 20 40 60 80 100 120 140 ID, Drain Current (A) Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 20 30 40 50 60 70 80 ID, Drain Current (A)
VDS=333V D=50% RG=2 TJ=125C VDS=333V RG=2 TJ=125C L=100H
Rise and Fall times vs Current
td(off)
120 100
tr and tf (ns)
VDS=333V RG=2 TJ=125C L=100H
td(on) and td(off) (ns)
tf
80 60 40 20 0 20
td(on)
tr
40
60
80
100
120
140
ID, Drain Current (A) Switching Energy vs Gate Resistance 8 Switching Energy (mJ) 7 6 5 4 3 2 1 0 0 5 10 15 20 25 Eon
VDS=333V ID=90A TJ=125C L=100H
VDS=333V RG=2 TJ=125C L=100H
Eon
Eoff
Eoff
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
400
1000
100
TJ=150C
10
TJ=25C
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
April, 2004
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTM50DHM38 - Rev 2
APT reserves the right to change, without notice, the specifications and information contained herein

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